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LAB

MECHANICAL DATA

Dimensions in mm (inches)

SEME

2N3810DCSM

DUAL HIGH GAIN

PNP TRANSISTORS IN A

HERMETICALLY SEALED

CERAMIC SURFACE MOUNT PACKAGE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

鈥?HERMETIC CERAMIC SURFACE

MOUNT PACKAGE

鈥?CECC SCREENING OPTIONS

4.32 鹵 0.13

(0.170 鹵 0.005)

2.29 鹵 0.20

(0.09 鹵 0.008)

1.65 鹵 0.13

(0.065 鹵 0.005)

0.64 鹵 0.08

(0.025 鹵 0.003)

1.40 鹵 0.15

(0.055 鹵 0.006)

2.54 鹵 0.13

(0.10 鹵 0.005)

2

1

3

4

5

鈥?SPACE QUALITY LEVELS OPTIONS

A

6

0.23

rad.

(0.009)

1.27 鹵 0.13

(0.05 鹵 0.005)

6.22 鹵 0.13

(0.245 鹵 0.005)

A=

LCC2 PACKAGE

Underside View

PAD 1 鈥?Collector 1

PAD 2 鈥?Base 1

PAD 3 鈥?Base 2

PAD 4 鈥?Collector 2

PAD 5 鈥?Emitter 2

PAD 6 鈥?Emitter 1

APPLICATIONS:

Suitable for use in high gain, low noise

differential amplifier applications.

ABSOLUTE MAXIMUM RATINGS

V

CBO

V

CEO

V

EBO

I

C

P

D

T

STG

NOTES

1. Base 鈥?Emitter Diode Open Circuited.

(T

amb

= 25擄C unless otherwise stated)

Collector 鈥?Base Voltage

Collector 鈥?Emitter Voltage

1

Emitter 鈥?Base Voltage

Collector Current

Total Device Dissipation

Derate above 25擄C

Storage Temperature Range

EACH SIDE

TOTAL DEVICE

鈥?0V

鈥?0V

鈥?V

鈥?0mA

500mW

600mW

2.9mW / 擄C

3.4mW / 擄C

鈥?5 to 200擄C

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 1/95

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2N3810DCSM相關(guān)型號(hào)PDF文件下載

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• 2N383
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• 2N384
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• 2N384
  英文版
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  2N384
• 2N385
  英文版
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  2N385
• 2N386
  英文版
  TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-27
  ETC
  2N386
• 2N386
  英文版
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• 2N388
  英文版
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• 2N388
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  ETC [ETC]
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• 2N389
  英文版
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  ETC
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• 2N389
  英文版
  TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-53
  2N389
• 2N3803
  英文版
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  2N3803
• 2N3803
  英文版
  TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | T...
  2N3803
• 2N3804
  英文版
  TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 50MA I(C) | TO-71
  ETC
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