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2N3773/D Datasheet

  • 2N3773/D

  • Complementary Silicon Power Transistor

  • 8頁

  • ETC

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ON Semiconductort
Complementary Silicon Power
Transistors
The 2N3773 and 2N6609 are PowerBaset power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, dc to dc converters or
inverters.
2N3773*
2N6609
*ON Semiconductor Preferred Device
NPN
PNP
鈥?/div>
High Safe Operating Area (100% Tested) 150 W @ 100 V
鈥?/div>
Completely Characterized for Linear Operation
鈥?/div>
High DC Current Gain and Low Saturation Voltage
h
FE
= 15 (Min) @ 8 A, 4 V
V
CE(sat)
= 1.4 V (Max) @ I
C
= 8 A, I
B
= 0.8 A
鈥?/div>
For Low Distortion Complementary Designs
16 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
140 VOLTS
150 WATTS
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
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*MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CEX
Value
140
160
160
7
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector Emitter Voltage
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
V
CBO
V
EBO
I
C
I
B
Collector Current 鈥?Continuous
鈥?Peak (1)
Base Current 鈥?Continuous
鈥?Peak (1)
16
30
4
15
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
150
0.855
Watts
W/_C
_C
T
J
, T
stg
鈥?5 to +200
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.17
_C/W
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 9
Publication Order Number:
2N3773/D

2N3773/D相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    GENERAL PURPOSE AMPLIFIERS
    STMICROELECTRONICS
  • 英文版
    Type 2N3700 Geometry 4500 Polarity NPN
    SEMICOA
  • 英文版
    Small Signal Transistors
    CENTRAL
  • 英文版
    NPN BIPOLAR TRANSISTOR
    MICROSEMI
  • 英文版
    GENERAL TRANSISTOR NPN SILICON
    BOCA
  • 英文版
    NPN BIPOLAR TRANSISTOR
    MICROSEMI ...
  • 英文版
    Small Signal Transistors
    CENTRAL [C...
  • 英文版
    LOW POWER NPN SILICON TRANSISTOR
    MICROSEMI ...
  • 英文版
    GENERAL TRANSISTOR NPN SILICON
    BOCA [Boca...
  • 英文版
    GENERAL PURPOSE AMPLIFIERS
    STMICROELECTRON...

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