鈥?/div>
Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc 鈥?2N3771
IS/b
= 2.5 Adc @ VCE = 60 Vdc 鈥?2N3772
. . . designed for linear amplifiers, series pass regulators, and inductive switching
applications.
* Indicates JEDEC Registered Data.
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Preferred
devices are Motorola recommended choices for future use and best overall value.
High Power NPN Silicon Power
Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
*MAXIMUM RATINGS
REV 7
PD, POWER DISSIPATION (WATTS)
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current 鈥?Continuous
Peak
Collector Current 鈥?Continuous
Peak
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Characteristics
Rating
100
150
125
175
200
25
50
75
0
0
Symbol
Symbol
TJ, Tstg
25
VCEO
VCEX
VCB
VEB
胃
JC
PD
IC
IB
50
75
100
125
150
TC, CASE TEMPERATURE (擄C)
Figure 1. Power Derating
2N3771
2N3771, 2N3772
7.5
15
5.0
30
30
50
50
40
鈥?65 to + 200
150
0.855
1.17
2N3772
100
5.0
15
7.0
20
30
80
60
Watts
W/
_
C
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_
C
175
200
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS
150 WATTS
*Motorola Preferred Device
2N3771*
2N3772
Order this document
by 2N3771/D
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
1