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2N3771_00 Datasheet

  • 2N3771_00

  • HIGH POWER NPN SILICON TRANSISTOR

  • 86.70KB

  • 5頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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上傳產(chǎn)品規(guī)格書

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2N3771, 2N3772
2N3771 is a Preferred Device
High Power NPN Silicon
Power Transistors
These devices are designed for linear amplifiers, series pass
regulators, and inductive switching applications.
Features
http://onsemi.com
鈥?/div>
Forward Biased Second Breakdown Current Capability
I
S/b
= 3.75 Adc @ V
CE
= 40 Vdc 鈭?2N3771
= 2.5 Adc @ V
CE
= 60 Vdc 鈭?2N3772
鈥?/div>
Pb鈭扚ree Packages are Available*
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS, 150 WATTS
MARKING
DIAGRAM
脦脦
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脦脦 脦 脦 脦
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脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
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MAXIMUM RATINGS
(Note 1)
Rating
Symbol
V
CEO
V
CEX
V
CB
V
EB
I
C
I
B
2N3771
40
50
50
2N3772
60
80
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector鈭扙mitter Voltage
Collector鈭扙mitter Voltage
Collector鈭払ase Voltage
Emitter鈭払ase Voltage
100
7.0
20
30
5.0
30
30
Collector Current 鈭?Continuous
Peak
Base Current 鈭?/div>
Continuous
Peak
7.5
15
5.0
15
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
P
D
150
0.855
W
W/擄C
擄C
T
J
, T
stg
鈥?65 to + 200
TO鈭?04AA (TO鈭?)
CASE 1鈭?7
STYLE 1
2N377xG
AYYWW
MEX
2N377x
G
A
YY
WW
MEX
THERMAL CHARACTERISTICS
Characteristic
Symbol
q
JC
Max
Unit
Thermal Resistance,
Junction鈭抰o鈭扖ase
1.17
擄C/W
= Device Code
x = 1 or 2
= Pb鈭扚ree Package
= Assembly Location
= Year
= Work Week
= Country of Origin
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
ORDERING INFORMATION
Device
2N3771
2N3771G
2N3772
2N3772G
Package
TO鈭?04
TO鈭?04
(Pb鈭扚ree)
TO鈭?04
TO鈭?04
(Pb鈭扚ree)
Shipping
100 Units / Tray
100 Units / Tray
100 Units / Tray
100 Units / Tray
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2006
1
October, 2006 鈭?Rev. 11
Publication Order Number:
2N3771/D

2N3771_00相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    GENERAL PURPOSE AMPLIFIERS
    STMICROELECTRONICS
  • 英文版
    Type 2N3700 Geometry 4500 Polarity NPN
    SEMICOA
  • 英文版
    Small Signal Transistors
    CENTRAL
  • 英文版
    NPN BIPOLAR TRANSISTOR
    MICROSEMI
  • 英文版
    GENERAL TRANSISTOR NPN SILICON
    BOCA
  • 英文版
    NPN BIPOLAR TRANSISTOR
    MICROSEMI ...
  • 英文版
    Small Signal Transistors
    CENTRAL [C...
  • 英文版
    LOW POWER NPN SILICON TRANSISTOR
    MICROSEMI ...
  • 英文版
    GENERAL TRANSISTOR NPN SILICON
    BOCA [Boca...
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    GENERAL PURPOSE AMPLIFIERS
    STMICROELECTRON...

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