TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
2N3766
2N3767
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
C
= +25
0
C
(1)
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
2N3766
60
80
6.0
2.0
4.0
25
2N3767
80
100
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
-65 to +200
Max.
7.0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R
胃
JC
0
0
1) Derate linearly 143 mW/ C between T
C
= +25 C and T
C
= +200
0
C
Unit
0
C/W
TO-66*
(TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
V
CE
= 80 Vdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 80 Vdc
V
CB
= 100 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
2N3766
2N3767
2N3766
2N3767
2N3766
2N3767
2N3766
2N3767
V
(BR)
CEO
60
80
500
500
10
10
10
10
500
Vdc
I
CEO
碌A(chǔ)dc
I
CEX
碌A(chǔ)dc
I
CBO
I
EBO
碌A(chǔ)dc
碌A(chǔ)dc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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