鈥?/div>
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. They are intended for
use in Commercial, Industrial, and Military power switching, amplifier, and
regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized
to further increase the SOA capability and inherent reliability of these
devices. The temperature range to 200
擄
C permits reliable operation in high
ambients, and the hermetically sealed package insures maximum reliability
and long life.
TO-5
VALUE
40
40
4.0
10
3.0
0.5
-65 to 200
-65 to 200
6.0
34.3
1.0
5.71
29
175
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
V
CEO
*
V
CB
*
V
EB
*
I
C
*
I
C
*
I
B
*
T
STG
*
T
J
*
P
D
*
P
D
*
胃
CHARACTERISTIC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
T
C
= 25
擄
C
Derate above 25
擄
C
Total Device Dissipation
T
A
= 25
擄
C
Derate above 25
擄
C
Thermal Resistance
Junction to Case
Junction to Ambient
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
擄
C
擄
C
Watts
mW/
擄
C
Watts
mW/
擄
C
擄
C/W
擄
C/W
JC
*
Indicates JEDEC registered Data.
MSC1026.PDF 02-24-99