2N3702
2N3702
PNP General Purpose Amplifier
鈥?This device designed for use as general purpose amplifier and
switches requiring collector currents to 300mA.
鈥?Sourced from Process 68.
鈥?See PN200 for Characteristics.
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
ST
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-25
-40
-5.0
-500
-55 ~ +150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
BV
(BR)CEO
BV
(BR)CBO
BV
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
Parameter
Test Condition
I
C
= -10mA, I
B
= 0
I
C
= -100碌A(chǔ), I
E
= 0
I
E
= -100碌A(chǔ), I
C
= 0
V
CB
= -20V, I
E
= 0
V
EB
= -3.0V, I
C
= 0
V
CE
= -5.0V, I
C
= -50mA
I
C
= -50mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -50mA
V
CB
= -10V, f = 1.0MHz
I
E
= -50mA, V
CE
= -5.0V
100
-0.6
60
Min.
-25
-40
-5.0
-100
-100
300
-0.25
-1.0
12
V
V
pF
MHz
Typ.
Max.
Units
V
V
V
nA
nA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
On Characteristics *
Small Signal Characteristics
* Pulse Test: Pulse
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/擄C
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
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