鈥?/div>
High Current: 2 Amps
Low V
CE (SAT)
5 Amp, 500V,
High Voltage
NPN Silicon Power
Transistors
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
擄
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-66
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
V
CBO
*
V
CEO
*
V
CER
*
V
EBO
*
I
C
*
I
C
*
I
B
*
T
STG
*
T
J
*
*
P
T
*
胃
*
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage R
BE
= 50
鈩?/div>
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16" from Case for 10 Sec.
Power Dissipation
T
C
= 25
擄
C
Thermal Impedance
VALUE
500
300
400
6
5
2
1
-65 to 200
-65 to 200
235
35
5.0
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
Amps
擄
C
擄
C
擄
C
Watts
擄
C/W
JC
Indicates JEDEC registered data.
MSC1057.PDF 05-19-99
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