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2N3442/D Datasheet

  • 2N3442/D

  • High-Power Industrial Transistors

  • 4頁(yè)

  • ETC

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ON Semiconductort
High-Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
2N3442
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS
117 WATTS
鈥?/div>
Collector 鈥揈mitter Sustaining Voltage 鈥?/div>
V
CEO(sus)
= 140 Vdc (Min)
鈥?/div>
Excellent Second Breakdown Capability
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
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*MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
Value
140
160
7.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector Current 鈥?/div>
Peak
Base Current 鈥?Continuous
Peak
10
15**
7.0
鈥?/div>
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
117
0.67
Watts
W/_C
_C
T
J
, T
stg
鈥?5 to +200
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
1.5
Unit
Thermal Resistance, Junction to Case
_C/W
* Indicates JEDEC Registered Data.
** This data guaranteed in addition to JEDEC registered data.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 10
Publication Order Number:
2N3442/D

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