鈥?/div>
Meets MIL-S-19500/393
Collector-Base Voltage: up to 85V
Peak Collector Current: 5A
High Power Dissipation in TO-5: 15W @ T
C
= 100
擄
C
Fast Switching
3 Amp, 85V,
NPN Silicon Power
Transistors
JAN, JTX, JTXV, JANS
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
擄
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-5
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
V
CBO
*
V
CEO
*
V
EBO
*
I
C
*
I
C
*
T
STG
*
T
J
*
P
T
*
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
D.C. Collector Current
Peak Collector Current
Storage Temperature
Operating Junction Temperature
Power Dissipation
T
C
= 25
擄
C Ambient
T
C
= 100
擄
C Case
VALUE
85
60
8
3
5
-65 to 200
-65 to 200
1.0
15
UNITS
Volts
Volts
Volts
Amps
Amps
擄
C
擄
C
Watts
Watts
*
Indicates
MIL-S-19500/393
MSC0980A.DOC 12-02-98