Data Sheet No. 2C2369A
mance similar to these devices.
speed switching applications.
鈥?/div>
High speed switching capabilities
Mechanical Specifications
Metallization
Bonding Pad Size
Die Thickness
Chip Area
Top Surface
Top
Backside
Emitter
Base
Al - 17.5 k脜 min.
Au - 6.5 k脜 nom.
3.6 mils x 2.8 mils
3.6 mils x 2.8 mils
8 mils nominal
16 mils x 16 mils
Silox Passivated
Electrical Characteristics
T
A
= 25
o
C
Parameter
BV
CEO
BV
CBO
BV
EBO
Test conditions
I
C
= 10.0 mA, I
B
= 0
I
C
= 10 碌A, I
E
= 0
I
E
= 10 碌A, I
C
= 0
Min
15
40
4.5
Max
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---
10
Unit
V dc
V dc
V dc
h
FE
I
C
= 10 mA dc, V
CE
= 0.35 V
40
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Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 碌s, duty cycle less than 2%.
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