鈥?/div>
Excellent Safe Operating Area
MAXIMUM RATINGS
2N3055 *
PNP
MJ2955 *
*Motorola Preferred Device
NPN
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
115 WATTS
PD, POWER DISSIPATION (WATTS)
脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦 脦
脦脦脦
脦 脦 脦
脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦 脦 脦
脦 脦 脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦 脦 脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
Rating
Symbol
VCEO
VCER
VCB
VEB
IC
IB
Value
60
70
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
100
7
Collector Current 鈥?Continuous
Base Current
15
7
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
115
0.657
Watts
W/
_
C
Operating and Storage Junction Temperature
Range
TJ, Tstg
鈥?65 to + 200
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.52
_
C/W
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (擄C)
175
200
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1