鈥?/div>
Pb鈭扚ree Packages are Available*
MAXIMUM RATINGS
(Note 1)
Rating
Collector鈭扙mitter Voltage
2N3055A
MJ15015, MJ15016
Collector鈭払ase Voltage
2N3055A
MJ15015, MJ15016
Collector鈭扙mitter Voltage Base
Reversed Biased
2N3055A
MJ15015, MJ15016
Emitter鈭払ase Voltage
Collector Current 鈭?Continuous
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
2N3055A
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
MJ15015, MJ15016
Operating and Storage Junction
Temperature Range
T
J
, T
stg
V
CEV
100
200
V
EBO
I
C
I
B
P
D
7.0
15
7.0
115
0.65
180
1.03
鈭?5 to +200
_C
Vdc
Adc
Adc
W
W/_C
V
CBO
100
200
Vdc
Symbol
V
CEO
60
120
Vdc
Value
Unit
Vdc
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS 鈭?115, 180 WATTS
TO鈭?04AA (TO鈭?)
CASE 1鈭?7
STYLE 1
MARKING DIAGRAMS
2N3055AG
AYWW
MEX
MJ1501xG
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction鈭抰o鈭扖ase
Symbol
R
qJC
Max
1.52
Max
0.98
Unit
_C/W
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G
= Pb鈭扚ree Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2006
1
April, 2006 鈭?Rev. 6
Publication Order Number:
2N3055A/D