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2N2880 Datasheet

  • 2N2880

  • 5 Amp, 80V, Planar, NPN Power Transistors JAN,JTX,JANTXV,JAN...

  • 3頁

  • MICROSEMI

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7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N2880
APPLICATIONS:
鈥?/div>
鈥?/div>
Fast Switching
High Frequency Switching and Amplifying
FEATURES:
鈥?/div>
鈥?/div>
High Reliability
Greater Gain Stability
5 Amp, 80V,
Planar, NPN
Power Transistors
JAN,JTX,JANTXV,JANS
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
擄
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-59
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CBO
*
V
CEO
*
V
EBO
*
I
C
*
I
B
*
T
STG
*
T
J
*
*
P
T
*
胃
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16"
From Case for 10 Sec.
Power Dissipation
T
A
= 25
擄
C
T
C
= 100
擄
C
Thermal Resistance
Junction to Case
VALUE
110
80
8
5
0.5
-65 to 200
-65 to 200
230
UNITS
V
V
V
A
A
擄
C
擄
C
擄
C
2
30
3.33
W
W
擄
C/W
JC
*
Indicates
MIL-S-19500/315
MSC0950A.DOC 11-09-98

2N2880 產(chǎn)品屬性

  • 0現(xiàn)貨查看交期

  • 100 : ￥1,235.89180散裝

  • -

  • 散裝

  • 在售

  • NPN

  • 5 A

  • 80 V

  • 1.5V @ 500mA，5A

  • 20μA

  • 40 @ 1A，2V

  • 2 W

  • -

  • -65°C ~ 200°C（TJ）

  • 接線柱安裝

  • TO-210AA，TO-59-4，接線柱

  • TO-59

2N2880相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10MA I(C) | CAN
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10MA I(C) | CAN
  • 英文版
    TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 50MA I(C) | CAN
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 50MA I(C) | CAN
  • 英文版
    TRANSISTOR | BJT | PAIR | NPN | 125MA I(C) | CAN
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10MA I(C) | CAN
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10MA I(C) | CAN
  • 英文版
    TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 125MA I(C) | CAN
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 125MA I(C) | CAN
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-3
  • 英文版
    SMALL SIGNAL TRANSISTORS
    CENTRAL
  • 英文版
    SMALL SIGNAL TRANSISTORS
    CENTRAL [C...
  • 英文版
    SMALL SIGNAL TRANSISTORS
    CENTRAL
  • 英文版
    SMALL SIGNAL TRANSISTORS
    CENTRAL [C...
  • 英文版
    TRANSISTOR | BJT | PAIR | PNP | 20V V(BR)CEO | 30MA I(C) | T...
    ETC
  • 英文版
    Medium Current General Purpose Amplifiers and Switches
    RAYTHEON
  • 英文版
    Medium Current General Purpose Amplifiers and Switches
    RAYTHEON [...
  • 英文版
    TRANSISTOR | BJT | PAIR | PNP | 20V V(BR)CEO | 30MA I(C) | T...
    ETC
  • 英文版
    Medium Current General Purpose Amplifiers and Switches
    RAYTHEON

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