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2N2857_02 Datasheet

  • 2N2857_02

  • Silicon NPN Transistor

  • 2頁(yè)

  • SEMICOA

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2N2857
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
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Screening and processing per MIL-PRF-19500
Appendix E
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JAN level (2N2857J)
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JANTX level (2N2857JX)
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JANTXV level (2N2857JV)
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JANS level (2N2857JS)
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QCI to the applicable level
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100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
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Radiation testing (total dose) upon request
Applications
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Ultra-High frequency transistor
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Low power
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NPN silicon transistor
Features
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Hermetically sealed TO-72 metal can
Also available in chip configuration
Chip geometry 0011
Reference document:
MIL-PRF-19500/343
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
T
STG
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Qualification Levels: JAN, JANTX,
JANTXV and JANS
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Radiation testing available
T
C
= 25擄C unless otherwise specified
Rating
15
30
3
40
200
1.14
300
1.71
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mA
mW
mW/擄C
mW
mW/擄C
擄C
擄C
Copyright餂?2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com

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