DATA SHEET
2N2411
2N2412
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed
for high speed switching applications.
MAXIMUM RATINGS:
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (TC=25擄C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
PD
TJ,Tstg
螛
JA
螛
JC
25
15
5.0
100
0.5
1.2
-65 to +200
350
146
UNITS
V
V
V
mA
W
W
擄C
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS:
SYMBOL
ICES
ICES
IEBO
BVCBO
BVCEO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hfe
Cob
Cib
TEST CONDITIONS
VCE=15V
VCE=15V, TA=150擄C
VEB=5.0V
IC=10碌A
IC=10mA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=0.5V, IC=50碌A
VCE=0.5V, IC=10mA
VCE=0.5V, IC=10mA, TA=-55擄C
VCE=1.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
2N2411
MIN MAX
10
10
25
15
0.7
10
20
10
1.4
5.0
8.0
0.2
0.9
60
10
2N2412
MIN MAX
10
10
10
25
15
0.7
20
40
20
1.4
5.0
8.0
0.2
0.9
120
20
UNITS
nA
碌A
碌A
V
V
V
V
pF
pF
(CONTINUED ON REVERSE SIDE)
R0
1
2
