All-diffused PNPN thyristors designed for grating operation in mA/碌A(chǔ) signal or detection circuits
=1000鈩?/div>
Symbol
V
RSM(REP)
V
RSM(NON-REP)
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
V
GFM
V
GRM
T
J
T
STG
Ratings
Peak reverse blocking voltage (1)
Non-repetitive peak blocking reverse
voltage (t<5.0 ms)
Forward Current RMS (all conduction
angles)
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal
Equilibrium is Restored.
Peak Gate Power 鈥?Forward
Average Gate Power 鈥?Forward
Peak Gate Current 鈥?Forward
Peak Gate Voltage 鈥?Forward
Peak Gate Voltage 鈥?Reverse
Operating
Range
Junction
Temperature
2N2322
2N2323
2N2324
2N2325
2N2326
25
40
50
75
100
150
1.6
150
225
200
300
V
V
Amp
15
0.1
0.01
0.1
Amp
W
W
Amp
6.0
6.0
-65 to +125
V
V
擄C
Storage Temperature Range
-65 to +150
ELECTRICAL CHARACTERISTICS
T
J
=25擄C unless otherwise noted, R
GK
=1000鈩?/div>
COMSET SEMICONDUCTORS
1/2
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