2N2222AQCSM
MECHANICAL DATA
Dimensions in mm (inches)
0.30
(0.012)
Rad.
4 plcs
QUAD HIGH SPEED, MEDIUM POWER
NPN SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
1.14 鈥?0.15
(0.045 鈥?0.006)
8.89 (0.350)
1.27 (0.050)
typ.
FEATURES
鈥?QUAD SILICON PLANAR EPITAXIAL
NPN TRANSISTORS
typ.
12
11
10
9
8
7
13
14
15
16
17
18
1
2
7.24 (0.285)
0.23
(0.009)
Rad.
18 plcs
3
鈥?HERMETIC CERAMIC SURFACE
MOUNT PACKAGE
鈥?CECC SCREENING OPTIONS
鈥?SPACE QUALITY LEVELS OPTIONS
鈥?HIGH SPEED SATURATED SWITCHING
1.40
(0.055)
Nom.
6
5
4
1.14(0.045)
typ
2.54
(0.100)
LCC6 PACKAGE
Underside View
1 鈥?Base 1
2 鈥?Emitter 1
3 鈥?Collector 1
7.鈥?Collector 2
8.鈥?Emitter 2
9 鈥?Base 2
10.鈥?Base 3
11 鈥?Emitter 3
12 鈥?Collector 3
16.鈥?Collector 4
17.鈥?Emitter 4
18.鈥?Base 4
APPLICATIONS:
Hermetically sealed quad surface
mount version of the popular
2N2222A for high reliability /
space applications requiring
small size and low weight
devices.
4,5,6,13,14,15 鈥?n/c
ABSOLUTE MAXIMUM RATINGS PER SIDE
(T
C
= 25擄C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
P
D
R
胃JA
R
胃JC
T
STG
Semelab plc.
PER DEVICE
Collector 鈥?Base Voltage
Collector 鈥?Emitter Voltage (I
B
= 0)
Emitter 鈥?Base Voltage (I
B
= 0)
Collector Current
Device Dissipation (T
A
25擄C)
Derate above 50擄C
TOTAL DEVICE
Total Device Dissipation (T
A
25擄C)
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Storage Temperature
75V
40V
6V
600mA
500mW
2.0mW / 擄C
2.0 W
60擄C/W
30擄C/W
鈥?5 to 200擄C
Prelim. 1/99
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
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