TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277
Devices
2N2150
2N2151
Qualified Level
JANTX
MAXIMUM RATINGS (T
C
= 25
0
C unless otherwise noted)
Ratings
Symbol
Value
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
c
= +100
0
C
(1)
Operating & Storage Junction Temperature Range
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
0
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
C
Unit
C/W
100
150
8.0
2.0
2.0
30
-65 to +200
Max.
3.3
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.3 W/ C for T
C
> +100 C
*See Appendix A for
Package Outline
0
TO-111*
R
胃
JC
0
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C)
Characteristics
Symbol
V
(BR)
CEO
V
CBO
I
CEO
I
CBO
I
CEX
I
EBO
I
CES
Min.
100
150
10
5.0
5.0
2.0
5.0
Max.
Unit
Vdc
Vdc
碌Adc
碌Adc
碌Adc
碌Adc
碌Adc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 50 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 100
碌Adc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
Collector-Emitter Cutoff Current
V
CE
= 120 Vdc, V
BE
= -1.0 Vdc
Emitter-Base Cutoff Current
V
EB
= 8.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 120 Vdc, V
BE
= 0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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