TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
2N2060
2N2060L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N2060
60
100
7.0
500
Unit
Vdc
Vdc
Vdc
mAdc
One
Both
Section Sections
Total Power Dissipation
@ T
A
= +25
0
C
(1)
540
600
P
T
0 (2)
@ T
C
= +25 C
1.5
2.12
Operating & Storage Junction Temperature Range
-65 to +200
T
J
,
T
stg
0
0
0
1) Derate linearly 3.08 mW/ C for T
A
> 25 C for one section, 3.48 mW/ C for both sections
2) Derate linearly 8.6 mW/
0
C for T
C
> 25
0
C for one section, 12.1 mW/
0
C for both sections
mW
W
0
C
TO-78*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= +25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CER
V
(BR)
CEO
I
CBO
Min.
80
60
10
2.0
10
2.0
Max.
Unit
Vdc
Vdc
碌A(chǔ)dc
畏Adc
碌A(chǔ)dc
畏Adc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(3)
R
BE
鈮?/div>
10
鈩?
I
C
= 10 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 80 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
V
EB
= 5.0 Vdc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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