TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208
Devices
2N1487
2N1488
2N1489
2N1490
Qualified Level
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
CEX
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
0
2N1487
2N1498
40
60
60
10
3.0
6.0
75
2N1488
2N1490
55
100
100
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
0
@ T
C
= 25
0
C
(1)
Operating & Storage Junction Temperature Range
-65 to +200
Max.
2.33
C
TO-33*
(TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.429 W/ C for T
C
> 25 C
*See Appendix A for
Package Outline
0
R
胃
JC
0
Unit
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200
碌A(chǔ)dc
Collector-Emitter Breakdown Voltage
I
C
= 0.5 mAdc, V
EB
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 30 Vdc
Emitter-Base Cutoff Current
V
EB
= 10 Vdc
2N1487, 2N1489
2N1488, 2N1490
2N1487, 2N1489
2N1488, 2N1490
2N1487, 2N1489
2N1488, 2N1490
V
(BR)
CEO
40
55
60
100
60
100
25
25
Vdc
V
(BR)
CBO
Vdc
V
(BR)
CEX
I
CBO
I
EBO
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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