FDFM2N111 Integrated N-Channel PowerTrench
廬
MOSFET and Schottky Diode
August 2005
FDFM2N111
Integrated N-Channel PowerTrench
廬
MOSFET and Schottky Diode
General Description
FDFM2N111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
Applications
Standard Buck Converter
Features
4 A, 20 V
R
DS(ON)
= 100m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 150m鈩?@ V
GS
= 2.5 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
PIN 1
A
S/C
G
A
1
2
3
6
5
4
A
S/C
D
C
D
S/C
G
A
TOP
MLP 3x3
S/C
D
BOTTOM
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
V
RRM
I
O
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation (Steady State)
Power dissipation (Steady State)
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
20
鹵12
4
10
20
2
1.7
0.8
-55 to +150
Units
V
V
A
V
A
W
o
C
Thermal Characteristics
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
70
150
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
2N111
Device
FDFM2N111
Reel Size
7inch
1
Tape Width
12mm
Quantity
3000 units
FDFM2N111 Rev. C2 (W)
漏2005 Fairchild Semiconductor Corporation