鈥?/div>
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25擄C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1400V
V
CE
=0V V
GE
=鹵 20V
V
GE
=20V I
C
=50mA
T
j
= 25擄C V
GE
=15V I
C
=50A
T
j
=125擄C V
GE
=15V I
C
=50A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=50A
V
GE
=鹵 15V
R
G
=2,4鈩?/div>
I
F
=50A V
GE
=0V
I
F
=50A
Min.
Typ.
Max.
1.0
200
9.0
3.0
Units
mA
碌A
V
V
pF
1.2
0.6
1.0
0.3
3.3
350
6.0
8.0
2.7
3.3
5000
750
330
碌s
V
ns
2.4
鈥?/div>
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.31
0.66
Units
擄C/W
0.05
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