2MBI300S-120
1200V / 300A 2 in one-package
Features
路 High speed switching
路 Voltage drive
路 Low inductance module structure
IGBT Module
Applications
路 Inverter for Motor drive
路 AC and DC Servo drive amplifier
路 Uninterruptible power supply
路 Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25擄C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector Continuous
current
1ms
Symbol
V
CES
V
GES
Tc=25擄C IC
Tc=80擄C
Tc=25擄C IC pulse
Tc=80擄C
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
2
Terminals *
2
Rating
1200
鹵20
400
300
800
600
300
600
2500
+150
-40 to +125
AC 2500 (1min. )
3.5
4.5
Unit
V
V
A
A
A
A
A
A
W
擄C
擄C
V
N路m
N路m
Equivalent Circuit Schematic
C2E1
C1
E2
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage *
1
Screw torque
G1
E1
G2
E2
*
1 :
Aii terminals should be connected together when isolation test will be done
*
2 :
Recommendable value : Mounting 2.5 to 3.5 N路m(M5 or M6)
Terminals 3.5 to 4.5 N路m(M6)
Electrical characteristics (at Tj=25擄C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
2
Characteristics
Min.
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
5.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
7.2
2.3
2.8
36000
7500
6600
0.35
0.25
0.1
0.45
0.08
2.3
2.0
鈥?/div>
Conditions
Max.
3.0
0.6
8.5
2.6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.2
0.6
鈥?/div>
1.0
0.3
3.0
鈥?/div>
0.35
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=鹵20V
V
CE
=20V, I
C
=300mA
Tc=25擄 C V
GE
=15V, I
C
=300A
Tc=125擄C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=300A
V
GE
=鹵15V
R
G
=2.7 ohm
Tj=25擄C
Tj=125擄C
I
F
=300A
Conditions
Max.
0.05
0.10
鈥?/div>
IGBT
Diode
the base to cooling fin
擄C/W
擄C/W
擄C/W
I
F
=300A, V
GE
=0V
V
碌s
Unit
mA
碌A
V
V
pF
碌s
Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance characteristics
Item
Thermal resistance
Characteristics
Min.
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.0167
Unit
*
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI300S-120相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
下載
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英文版
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A
FUJI
-
英文版
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A
FUJI [Fuji...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
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