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2MBI300P-140 Datasheet

  • 2MBI300P-140

  • 1400V/300A 2-Pack IGBT

  • 220.84KB

  • 5頁

  • FUJI

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上傳產(chǎn)品規(guī)格書

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2MBI 300P-140
IGBT MODULE ( P-Series )
n
Features
鈥?/div>
Square SC SOA at 10 x I
C
鈥?/div>
Simplified Parallel Connection
鈥?/div>
Narrow Distribution of Characteristics
鈥?/div>
High Short Circuit Withstand-Capability
2-Pack IGBT
1400V
300A
n
Outline Drawing
n
Applications
鈥?/div>
High Power Switching
鈥?/div>
A.C. Motor Controls
鈥?/div>
D.C. Motor Controls
鈥?/div>
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
鈥?/div>
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
( T
c
=25擄C
)
Symbols
V
CES
V
GES
Continuous T
C
=25擄C
I
C
Continuous T
C
=80擄C
1ms
T
C
=25擄C
I
C PULSE
1ms
T
C
=80擄C
-I
C
1ms
-I
C PULSE
P
C
T
j
T
stg
A.C. 1min.
V
is
Mounting *1
Terminals *2
Ratings
1400
鹵
20
400
300
800
600
300
600
2500
+150
-40
鈭?/div>
+125
2500
3.5
4.5
Units
V
V
n
Equivalent Circuit
Collector
Current
A
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
W
擄C
擄C
V
Nm
Note:
*1:Recommendable Value; 2.5
鈭?/div>
3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5
鈭?/div>
4.5 Nm (M6)
鈥?/div>
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25擄C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1400V
V
CE
=0V V
GE
=鹵 20V
V
GE
=20V I
C
=300mA
T
j
= 25擄C V
GE
=15V I
C
=300A
T
j
=125擄C V
GE
=15V I
C
=300A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=300A
V
GE
=鹵 15V
R
G
=2.7鈩?/div>
I
F
=300A V
GE
=0V
I
F
=300A
Min.
Typ.
Max.
3.0
600
9.0
3.0
Units
mA
碌A(chǔ)
V
V
pF
1.2
0.6
1.0
0.3
3.3
350
6.0
8.0
2.7
3.3
30000
4500
2000
碌s
V
ns
2.4
鈥?/div>
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.05
0.10
Units
擄C/W
0.0167

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    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
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    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
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    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
    ETC
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
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