2MBI200NB-120-01
1200V / 200A 2 in one-package
Features
路 VCE(sat) classified for easy parallel connection
路 High speed switching
路 Voltage drive
路 Low inductance module structure
IGBT Module
Applications
路 Inverter for Motor drive
路 AC and DC Servo drive amplifier
路 Uninterruptible power supply
路 Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
Absolute maximum ratings
(at Tc=25擄C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector
current
Continuous
1ms
Symbol
V
CES
V
GES
I
C
I
C
pulse
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
1
Terminals *
2
Rating
1200
鹵20
200
400
200
400
1500
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
Unit
V
V
A
A
A
A
W
擄C
擄C
V
N路m
N路m
G1
隴
隴
C1
E2
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque
V
CE(sat)
classification
*
1 :
Recommendable value : 2.5 to 3.5 N路m (M5) or (M6)
*
2 :
Recommendable value : 3.5 to 4.5 N路m (M6)
Electrical characteristics (at Tj=25擄C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
瀹?/div>
淇?/div>
re
Symbol
I
CES
I
GES
ot
N
C
oes
C
res
t
on
t
r
t
off
t
f
V
F
t
rr
mm
co
Characteristics
Min.
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
4.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
姝?/div>
寤?/div>
32000
11600
10320
0.65
0.25
0.85
0.35
for
nd
e
C
D
E
Max.
2.0
30
7.5
3.3
鈥?/div>
鈥?/div>
鈥?/div>
1.2
0.6
1.5
0.5
3.0
0.35
瀹?/div>
浜?/div>
ne
F
A
B
Conditions
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=200A
Rank
Lenge
2.25 to 2.50V
2.40 to 2.65V
2.55 to 2.80V
2.70 to 2.95V
2.85 to 3.10V
de
w
紼?/div>
n.
姍?/div>
sig
Unit
mA
碌A(chǔ)
V
V
pF
E1
G2
隴 Current control circuit
E2
Conditions
Ic = 200A
V
GE
= 15V
Tj = 25擄C
3.00 to 3.30V
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=鹵20V
V
CE
=20V, I
C
=200mA
V
GE
=15V, I
C
=200A
V
GE(th)
V
CE(sat)
C
ies
碌s
V
GE
=鹵15V
R
G
=4.7ohm
I
F
=200A, V
GE
=0V
I
F
=200A
V
碌s
Thermal resistance characteristics
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
Characteristics
Min.
Thermal resistance
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
0.025
Max.
0.085
0.18
鈥?/div>
IGBT
Diode
the base to cooling fin
擄C/W
擄C/W
擄C/W
Conditions
Unit
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI200NB-120-01B相關(guān)型號(hào)PDF文件下載
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英文版
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A
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英文版
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英文版
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英文版
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ETC
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英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
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英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
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英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
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英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
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英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
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英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
ETC
-
英文版
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
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