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2MBI150N-120 Datasheet

  • 2MBI150N-120

  • IGBT MODULE ( N series )

  • 4頁(yè)

  • FUJI

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IGBT MODULE ( N series )
n
Features
鈥?/div>
Square RBSOA
鈥?/div>
Low Saturation Voltage
鈥?/div>
Less Total Power Dissipation
鈥?/div>
Improved FWD Characteristic
鈥?/div>
Minimized Internal Stray Inductance
鈥?/div>
Overcurrent Limiting Function (4~5 Times Rated Current)
n
Outline Drawing
n
Applications
鈥?/div>
High Power Switching
鈥?/div>
A.C. Motor Controls
鈥?/div>
D.C. Motor Controls
鈥?/div>
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
鈥?/div>
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( T
c
=25擄C
)
Symbols
V
CES
V
GES
Continuous
I
C
1ms
I
C PULSE
Continuous
-I
C
1ms
-I
C PULSE
P
C
T
j
T
stg
A.C. 1min.
V
is
Mounting *1
Terminals *2
Ratings
1200
鹵
20
150
300
150
300
1100
+150
-40
鈭?/div>
+125
2500
3.5
4.5
Units
V
V
A
W
擄C
擄C
V
Nm
n
Equivalent Circuit
Note:
*1:Recommendable Value; 2.5
鈭?/div>
3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5
鈭?/div>
4.5 Nm (M6)
鈥?/div>
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25擄C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=鹵 20V
V
GE
=20V I
C
=150mA
V
GE
=15V I
C
=150A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=150A
V
GE
=鹵 15V
R
G
=5.6鈩?/div>
I
F
=150A V
GE
=0V
I
F
=150A
Min.
Typ.
Max.
2.0
30
7.5
3.3
Units
mA
碌A(chǔ)
V
V
pF
1.2
0.6
1.5
0.5
3.0
350
4.5
24000
8700
7740
0.65
0.25
0.85
0.35
碌s
V
ns
鈥?/div>
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.11
0.33
Units
擄C/W
0.025

2MBI150N-120相關(guān)型號(hào)PDF文件下載

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    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
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    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
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    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
    ETC
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
    ETC
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
    ETC
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
    ETC
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
    ETC
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
    ETC
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CE...
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...
    ETC
  • 英文版
    TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES...

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