鈥?/div>
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25擄C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=鹵 20V
V
GE
=20V I
C
=100mA
V
GE
=15V I
C
=100A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=100A
V
GE
=鹵 15V
R
G
=9.1鈩?/div>
I
F
=100A V
GE
=0V
I
F
=100A
Min.
Typ.
Max.
2.0
30
7.5
3.3
Units
mA
碌A(chǔ)
V
V
pF
1.2
0.6
1.5
0.5
3.0
350
4.5
16000
5800
5160
0.65
0.25
0.85
0.35
碌s
V
ns
鈥?/div>
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.16
0.43
Units
擄C/W
0.025
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