Data Sheet No. 2C2484
similar to these devices.
speed switching applications.
鈥?/div>
High speed switching capabilities
Mechanical Specifications
Metallization
Bonding Pad Size
Die Thickness
Chip Area
Top Surface
Top
Backside
Emitter
Base
Al - 19.5 k脜 min.
Au - 6.5 k脜 nom.
3.6 mils diameter
2.5 mils diameter
8 mils nominal
18 mils x 18 mils
Silox Passivated
Electrical Characteristics
T
A
= 25
o
C
Parameter
BV
CEO
BV
CBO
I
CBO
Test conditions
I
C
= 10.0 mA, I
B
= 0
I
C
= 10 碌A, I
E
= 0
V
CB
= 45 Vc, I
E
= 0
Min
60
60
---
Max
---
---
10
Unit
V dc
V dc
nA
h
FE
I
C
= 100 碌A dc, V
CE
= 5.0 V
175
---
---
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 碌s, duty cycle less than 2%.
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