FDW2509NZ
January 2005
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench
廬
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild鈥檚 Semiconductor鈥檚 advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V 鈥?12V).
Features
鈥?/div>
7.1 A, 20 V. R
DS(ON)
= 20 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 26 m鈩?@ V
GS
= 2.5 V
Extended V
GSS
range (鹵12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
鈥?/div>
鈥?/div>
Applications
Li-Ion Battery Pack
鈥?/div>
鈥?/div>
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
鹵12
(Note 1a)
Units
V
A
W
擄C
7.1
30
1.6
1.1
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
77
114
擄C/W
Package Marking and Ordering Information
Device Marking
2509NZ
漏2005
Fairchild Semiconductor Corporation
Device
FDW2509NZ
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
3000 units
FDW2509NZ Rev C(W)
2509NZ相關(guān)型號(hào)PDF文件下載
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