FDW2501N
March 2004
FDW2501N
Dual N-Channel 2.5V Specified PowerTrench
廬
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor鈥檚 advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V 鈥?12V).
Features
鈥?/div>
6 A, 20 V.
R
DS(ON)
= 0.018
鈩?/div>
@ V
GS
= 4.5V
R
DS(ON)
= 0.028
鈩?/div>
@ V
GS
= 2.5V
鈥?/div>
Extended V
GSS
range (鹵12V) for battery applications.
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
Low profile TSSOP-8 package
Applications
鈥?/div>
Load switch
鈥?/div>
Motor drive
鈥?/div>
DC/DC conversion
鈥?/div>
Power management
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
鹵12
(Note 1a)
Units
V
V
A
W
擄C
6
30
1.0
0.6
-55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
125
208
擄C/W
Package Marking and Ordering Information
Device Marking
2501N
Device
FDW2501N
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
3000 units
漏2004
Fairchild Semiconductor Corporation
FDW2501N Rev E(W)
2501N相關型號PDF文件下載
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