2324-12L
12 Watts - 20 Volts, Class C
Microwave 2300 - 2400 MHz
GENERAL DESCRIPTION
The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts
of Class C, RF output power over the band 2300-2400 MHz. This transistor is
specifically designed for Microwave Broadband Class C amplifier
applications. It includes input and output pre matching and utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. The transistor uses a fully hermetic High Temperature Solder
Sealed package.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
44 Watts
40 Volts
3.5 Volts
3.0 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
畏
c
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 2.3 - 2.4 GHz
Vcc = 20 Volts
Po = 12 Watts
As Above
F=2.3 GHz, Pin =2.5W
MIN
12
2.5
6.8
40
10:1
TYP
MAX
UNITS
Watts
Watts
dB
%
BVebo
BVces
H
fe
Cob
胃
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance*
Thermal Resistance
Ie= 10 mA
Ic = 50mA
Vce=5V, Ic=1A
F=1 MHz, Vcb=24V
3.5
45
10
4.0
Volts
Volts
o
C/W
*Not measureable due to internal prematch network
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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