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CAT22C10

256-Bit Nonvolatile CMOS Static RAM

FEATURES

s

Single 5V Supply

s

Fast RAM Access Times:

s

Low CMOS Power Consumption:

鈥?00ns

鈥?00ns

s

Infinite E

2

PROM to RAM Recall

s

CMOS and TTL Compatible I/O

s

Power Up/Down Protection

s

100,000 Program/Erase Cycles (E

2

PROM)

鈥揂ctive: 40mA Max.

鈥揝tandby: 30

碌

A Max.

s

JEDEC Standard Pinouts:

鈥?8-pin DIP

鈥?6-pin SOIC

s

10 Year Data Retention

s

Commercial, Industrial and Automotive

Temperature Ranges

DESCRIPTION

The CAT22C10 NVRAM is a 256-bit nonvolatile memory

organized as 64 words x 4 bits. The high speed Static

RAM array is bit for bit backed up by a nonvolatile

E

2

PROM array which allows for easy transfer of data

from RAM array to E

2

PROM (STORE) and from

E

2

PROM to RAM (RECALL). STORE operations are

completed in 10ms max. and RECALL operations typi-

cally within 1.5碌s. The CAT22C10 features unlimited

RAM write operations either through external RAM

writes or internal recalls from E

2

PROM. Internal false

store protection circuitry prohibits STORE operations

when V

CC

is less than 3.0V.

The CAT22C10 is manufactured using Catalyst鈥檚 ad-

vanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles (E

2

PROM)

and has a data retention of 10 years. The device is

available in JEDEC approved 18-pin plastic DIP and 16-

pin SOIC packages.

PIN CONFIGURATION

DIP Package (P)

SOIC Package (J)

A4

A3

A2

A1

A0

CS

Vss

STORE

PIN FUNCTIONS

Pin Name

A

0

鈥揂

5

Function

Address

Data In/Out

Write Enable

Chip Select

Recall

Store

+5V

Ground

No Connect

NC

A4

A3

A2

A1

A0

CS

Vss

STORE

1

2

3

4

5

6

7

8

9

18

17

16

15

14

13

12

11

10

Vcc

NC

A5

I/O3

I/O2

I/O1

I/O0

WE

RECALL

22C10 F01

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

Vcc

A5

I/O4

I/O3

I/O2

I/O1

WE

RECALL

I/O

0

鈥揑/O

3

WE

CS

RECALL

STORE

V

CC

V

SS

22C10 F02

NC

漏 1998 by Catalyst Semiconductor, Inc.

Characteristics subject to change without notice

1

Doc. No. 25018-0A 2/98 N-1

next

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