HiPerFAST
TM
IGBT
with Diode
IXGH 20N60BD1
IXGT 20N60BD1
V
CES
= 600 V
I
C25
= 40 A
V
CE(sat)typ
= 1.7 V
= 100 ns
t
fi(typ)
Preliminary data
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 22
W
Clamped inductive load, L = 100
mH
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
40
20
80
I
CM
= 40
@ 0.8 V
CES
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
擄C
擄C
擄C
擄C
g
g
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C
E
C = Collector,
TAB = Collector
C (TAB)
G = Gate,
E = Emitter,
Features
鈥?International standard packages
鈥?High frequency IGBT and antiparallel
FRED in one package
鈥?High current handling capability
鈥?HiPerFAST
TM
HDMOS
TM
process
鈥?MOS Gate turn-on
-drive simplicity
Applications
鈥?Uninterruptible power supplies (UPS)
鈥?Switched-mode and resonant-mode
power supplies
鈥?AC motor speed control
鈥?DC servo and robot drives
鈥?DC choppers
Advantages
鈥?Space savings (two devices in one
package)
鈥?High power density
鈥?Suitable for surface mounting
鈥?Very low switching losses for high
frequency applications
鈥?Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
Mounting torque (M3) TO-247AD
1.13/10 Nm/lb.in.
300
6
4
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247AD
TO-268
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25擄C
T
J
= 150擄C
5.5
200
3
鹵100
1.7
2.0
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98566A (3/99)
漏 2000 IXYS All rights reserved
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