2001
1.0 Watt - 28 Volts, Class C
Microwave 2000 MHz
GENERAL DESCRIPTION
The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class
C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting
are used to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder Sealed package.
CASE OUTLINE
55BT-1, Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
5.0 Watts
50 Volts
3.5 Volts
0.25 A
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 2 GHz
Vcb = 28 Volts
Po = 1.0 Watts
As Above
F = 2 GHz, Po = 1.0 W
MIN
1.0
0.125
9.0
9.5
40
30:1
TYP
MAX
UNITS
Watt
Watt
dB
%
畏
c
VSWR
1
BVces
BVcbo
BVebo
Icbo
h
FE
Cob
胃
jc
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ic = 1 mA
Ie = 1.0 mA
Vcb = 28 Volts
50
45
3.5
500
20
4.0
35
Volts
Volts
Volts
碌
A
pF
C /W
Vce = 5 V, Ic = 100 mA
F =1 MHz, Vcb = 28 V
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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