鈥?/div>
Storage temperature
Tstg
鈥?5 to +150
擄C
鈥?0 to +75
擄C
V
R
34
V
M-235
Structure
Silicon epitaxial planar-type diode
Electrical Characteristics
Item
Reverse current
Reverse voltage
Diode capacitance
Symbol
I
R
V
R
C
2
C
25
C
2
/C
25
C
1
/C
28
C
25
/C
28
rs
鈭咰
Conditions
V
R
=28 V
I
R
=1 碌A(chǔ)
V
R
=2 V, f=1 MHz
V
R
=25 V, f=1 MHz
Min.
34
42.9
2.60
14.5
21.5
1.03
Typ.
Max.
10
51.0
3.03
15.5
(Ta=25 擄C)
Unit
nA
V
pF
pF
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
C
D
=14 pF, f=470 MHz
V
R
=1 to 28 V
1.1
2.0
鈩?/div>
%
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