Ordering number :EN5224A
1SV298
Silicon Epitaxial PIN Diode
蟺
Type Attenuator Applications
Features
路 Composite type with 3 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
路 Small interterminal capacitance (C=0.23pF typ).
路 Small forward series resistance (rs=7.5鈩?typ).
Package Dimensions
unit:mm
1269
[1SV298]
1:Cathode, Cathode
2:Anode
3:Anode, Cathode
4:Anode
SANYO:CP4
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Reverse Voltage
Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VR
IF
P
Tj
Tstg
Conditions
Ratings
50
50
150
125
鈥?5 to +125
Unit
V
mA
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Reverse Voltage
Reverse Current
Forward Voltage
Interterminal Capacitance
Series Resistance
Symbol
VR
IR
VF
C
rs
IR=10碌A(chǔ)
VR=50V
IF=50mA
VR=50V, f=1MHz
IF=10碌A(chǔ), f=100MHz
IF=10mA, f=100MHz
6.5
0.975
0.23
2400
7.5
10.0
Conditions
Ratings
min
50
0.1
1.15
typ
max
Unit
V
碌A(chǔ)
V
pF
鈩?/div>
鈩?/div>
Note : The specifications shown above are for each individual diode.
路 Marking:QV
Electrical Connection
1:Cathode, Cathode
2:Anode
3:Anode, Cathode
4:Anode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/D2695GI/82595GI (KOTO) TA-0683, TA-0520 No.5224-1/3
1
2
3
