1SS356
Diodes
Band switching diode
1SS356
!
Applications
High frequency switching
!
External dimensions
(Units : mm)
CATHODE MARK
!
Construction
Silicon epitaxial planar
1.25
鹵
0.1
2.5
鹵
0.2
1.7
鹵
0.1
!
Features
1) Small surface mounting type. (UMD2)
2) High reliability.
0.1
+0.1
鈭?.05
0.3
鹵
0.05
+0.2
0.7
鈭?.1
ROHM : UMD2
EIAJ : SC - 76
JEDEC : SOD - 323
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
DC reverse voltage
DC forward current
Junction temperature
Storage temperature
Symbol
V
R
I
F
Tj
Tstg
Limits
35
100
125
鈭?5
~
+125
Unit
V
mA
擄C
擄C
!
Electrical characteristics
(Ta=25擄C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Forward operating resistance
Symbol
V
F
I
R
C
T
r
F
Min.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Max.
1.0
10
1.2
0.9
Unit
V
nA
pF
鈩?/div>
I
F
=10mA
V
R
=25V
V
R
=6V,
f=1MHz
I
F
=2mA,
f=100MHz
Conditions
1
2