Ordering number :EN3240B
1SS351
Sillicon Epitaxial Schottky Barrier Diode
UHF Detector, Mixer Applications
Features
路 Series connection of 2 elements in a small-sized
package facilitates high-density mounting and
permits 1SS351-applied equipment to be made
smaller.
路 Small interterminal capacitance (C=0.69pF typ).
路 Small forward voltage (VF=0.23V max).
Package Dimensions
unit:mm
1147A
[1SS351]
1:Anode
2:Cathode
3:Anode, Cathode
SANYO:CP
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Peak Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IF
Tj
Tstg
Conditions
Ratings
5
30
125
鈥?5 to +125
Unit
V
mA
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Forward Voltage
Forward Current
Reverse Current
Interterminal Capacitance
Symbol
VF
IF
IR
C
IF=1mA
VF=0.5V
VR=0.5V
VR=0.2V, f=1MHz
30
25
0.69
0.9
Conditions
Ratings
min
typ
max
0.23
Unit
V
mA
碌A(chǔ)
pF
Note)*:The specifications shown above are for each
individual diode.
路 Marking:CH
Electrical Connection
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/53196GI (KOTO)/D149MO, TS 8-6255 No.3240-1/2
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