Ordering number :EN3157B
1SS345
Sillicon Epitaxial Schottky Barrier Diode
UHF Detector, Mixer Applications
Features
路 Small interterminal capacitance (C=0.45pF typ).
路 Low forward voltage and excellent detection effi-
ciency (VF=0.35V max)
路 High breakdown voltage (VR=55V).
路 Very small-sized package permitting the 1SS345-
applied sets to be made small and slim.
Package Dimensions
unit:mm
1148A
[1SS345]
1:Anode
2:No connection
3:Cathode
SANYO:CP
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Reverse Voltage
Forward Current
Power Dissipation
Junction Temperature
Storage Temperature
Reverse Burning
Symbol
VR
IF
P
Tj
Tstg
Bo
(C=25pF)
Conditions
Ratings
55
10
150
125
鈥?5 to +125
2
Unit
V
mA
mW
藲C
藲C
erg
Electrical Characteristics
at Ta = 25藲C
Parameter
Forward Voltage
Forward Current
Reverse Voltage
Reverse Current
Interterminal Capacitance
Symbol
VR
IF
VR
IR
C
IF=1mA
VF=1V
IR=100碌A(chǔ)
VR=40V
VR=10V, f=1MHz
0.45
10
55
50
Conditions
Ratings
min
typ
max
0.35
Unit
V
mA
V
碌A(chǔ)
pF
路 Marking:AH
Electrical Connection
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/53196GI (KOTO)/O259MO, TS 8-5744 No.3157-1/2
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