Transys
Electronics
L I M I T E D
HIGH SPEED SILICON SWITCHING DIODE
IN914, B
IN916
250mW
DO- 35
Glass Axial Package
FEATURES
Intended for General Purpose Application.
ABSOLUTE MAXIMUM RATINGS (Ta=25潞C unless specified otherwise)
DESCRIPTION
SYMBOL
V
R
Reverses Voltage ( Continuous)
V
RRM
Repetitive Peak Reverse Voltage
Average Forward Current
T
A
=25潞C
I
F (AV)
I
F (AV)
T
A
=150潞C
I
F
Forward Current (D.C.)
I
FRM
Repetitive Peak Forward Current
Non Repetitive Peak Surge Current
I
FSM
tp=1sec
P
tot
Power Dissipation
T
stg
Storage Temperature
T
amb
Operating ambient Temperature
ELECTRICAL CHARACTERISTICS (Ta=25潞C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
V
F
Forward Voltage
I
F
=10
IN914/916
I
F
=100mA,
1N914B
I
F
=5mA,
Reverse Breakdown Voltage
Reverse Current
V
(BR)R
I
R
I
R
=100碌A
V
R
= 20V
V
R
= 75V
V
R
= 20V, T
j
=150潞C
VALUE
75
100
75
10
75
225
500
250
-65 to +200
-65 to +175
UNIT
V
V
mA
mA
mA
mA
mA
mW
潞C
潞C
MIN
TYP
MAX
1.0
1.0
0.72
UNIT
V
V
V
V
n螒
碌A
0.62
100
25
5
Diode Capacitance
Reverse Recovery Time
C
d
t
rr
V
R
=0, f=1MHz
I
F
=10mA to I
R
=10mA
R
L
=100
鈩?/div>
Measured at I
R
=1mA
I
F
=10mA to I
R
=60mA
R
L
=100
鈩?/div>
Measured at I
R
=1mA
2.5
8
pF
ns
4
ns
1
2
