1N914-1 Datasheet

IC型號(hào)：
1N914-1
PDF描述：
PERFORMANCE SPECIFICATION
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The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 8 September 2001.

INCH POUND

MIL-PRF-19500/116L

8 June 2001

SUPERSEDING

MIL-PRF-19500/116K

28 February 1997

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA,

1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC

JANS1N4148-1 (see 6.4). Device types 1N914

and 1N4531 are inactive for new design.

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three

levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device.

1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5.

1.3 Maximum ratings.

Type

(BR)

RWM

= 25

75 (1)

125 (2)

200 (3)

FSM

1/120 s

A (pk)

STG

V dc

1N914, UR

1N4531, UR

1N4148-1, UR-1

1N4148UB,

1N4148UB2,

1N4148UB2R,

1N4148UBCA,

1N4148UBCC

1N4148UBCD,

100

V (pk)

-65 to +200

-65 to +175

-65 to +200

C/W

250

(leaded)

100(UR)

C/W

N/A

150

(1) Derate at 0.5 mA/

C above T

= 25

(2) Derate at 0.83 mA/

C above T

= 25

(3) Derate at 1.14 mA/

C above T

= 25

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

現(xiàn)有數(shù)量
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價(jià)格
981 : ￥7.63191散裝
系列
-
包裝
散裝
產(chǎn)品狀態(tài)
在售
技術(shù)
標(biāo)準(zhǔn)
電壓 - DC 反向 (Vr)（最大值）
75 V
電流 - 平均整流 (Io)
200mA
不同 If 時(shí)電壓 - 正向 (Vf)
1.2 V @ 50 mA
速度
小信號(hào) =< 200mA（Io），任意速度
反向恢復(fù)時(shí)間 (trr)
5 ns
不同 Vr 時(shí)電流 - 反向泄漏
500 nA @ 75 V
不同?Vr、F 時(shí)電容
4pF @ 0V，1MHz
安裝類(lèi)型
通孔
封裝/外殼
DO-204AH，DO-35，軸向
供應(yīng)商器件封裝
DO-35（DO-204AH）
工作溫度 - 結(jié)
-65°C ~ 175°C

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