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HERMETIC CERAMIC PACKAGE
Bv > 75V at 5uA
Ir < 100nA at 40V
C < 4.0 pF
1
14
2
13
3
12
4
11
5
10
6
9
7
8
Absolute Maximum Ratings:
Symbol
VBR(R) *1 *2
IO
*1 * 3
IFSM
*1
PT1
*4
PT2
*4
Top
Tstg
Parameter
Reverse Breakdown Voltage
Continuous Forward Current
Peak Surge Current (tp= 1/120 s)
Power Dissipation per Junction @ 25擄C
Power Dissipation per Package @ 25擄C
Operating Junction Temperature Range
Storage Temperature Range
Limit
75
300
500
400
600
-65 to +150
-65 to +200
Unit
Vdc
mAdc
mAdc
mW
mW
擄C
擄C
.320
.290
.200
.125
.200
MAX
.310
.220
.005
MIN
.023
.014
.070
.030
.785
MAX
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/擄C above +25 擄C
NOTE 4: Derate at 4.0mW/擄C above +25 擄C
.100
BSC
.060
.015
.098
MAX
O-15
.015
.008
Electrical Characteristics (Per Diode) @
25擄C unless otherwise specified
PACKAGE OUTLINE
Symbol Parameter
Conditions
Min
Max
1
0.1
25
4.0
15
10
5
Unit
Vdc
uAdc
nAdc
pF
ns
ns
mV
Vf1
Forward Voltage
If = 100mAdc *1
IR1
Reverse Current
VR = 40 Vdc
IR2
Reverse Current
VR = 20 Vdc
Ct
Capacitance (pin to pin)
VR = 0 Vdc ; f = 1 MHz
tfr
Forward Recovery Time
If = 100mAdc
trr
Reverse Recovery Time
If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms
VF5
Forward Voltage Match
If = 10 mA
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1022.PDF Rev - 11/25/98
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