1N6264
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
FEATURES
鈥?Good optical to mechanical alignment
鈥?Mechanically and wavelength matched to the
TO-18 series phototransistor
鈥?Hermetically sealed package
0.030 (0.76)
NOM
0.255 (6.48)
鈥?High irradiance level
鈥?(*) Indicates JEDEC registered values
1.00 (25.4)
MIN
ANODE
(CASE)
DESCRIPTION
鈥?The 1N6264 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
0.100 (2.54)
0.050 (1.27)
1
0.040 (1.02)
0.040 (1.02)
45擄
1
3
脴0.020 (0.51) 2X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of 鹵 .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/擄C above 25擄C ambient.
2. Derate power dissipation linearly 13.0 mW/擄C above 25擄C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16鈥?/div>
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into
a solid angle of 2 steradians.
ABSOLUTE MAXIMUM RATINGS
Parameter
* Operating Temperature
* Storage Temperature
* Soldering Temperature (Iron)
(3,4,5 and 6)
* Soldering Temperature (Flow)
(3,4 and 6)
* Continuous Forward Current
* Forward Current (pw, 1碌s; 200Hz)
* Reverse Voltage
* Power Dissipation (T
A
= 25擄C)
(1)
Power Dissipation (T
C
= 25擄C)
(2)
(T
A
= 25擄C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
I
F
V
R
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
擄C
擄C
擄C
擄C
mA
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25擄C) (All measurements made under pulse conditions)
MIN
TYP
MAX
UNITS
SYMBOL
P
* Peak Emission Wavelength
Emission Angle at 1/2 Power
* Forward Voltage
* Reverse Leakage Current
* Total Power
Rise Time 0-90% of output
Fall Time 100-10% of output
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
R
= 3 V
I
F
= 100 mA
V
F1
I
R
P
O
t
r
t
f
935
鈥?/div>
鈥?/div>
鈥?/div>
6
鈥?/div>
鈥?/div>
鈥?/div>
鹵8
鈥?/div>
鈥?/div>
鈥?/div>
1.0
1.0
955
鈥?/div>
1.7
10
鈥?/div>
鈥?/div>
鈥?/div>
nm
Deg.
V
碌A(chǔ)
mW
碌s
碌s
錚?/div>
2001 Fairchild Semiconductor Corporation
DS300276
3/2/01
1 OF 3
www.fairchildsemi.com
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