1617AM10
10 Watts, 18 Volts, Class A
Linear 1500 - 1800 MHz
GENERAL DESCRIPTION
The 1617AM10 is a COMMON EMITTER, HIGH GAIN transistor capable of
providing 10 Watts, P
1dB.
, Class A, RF output power in the band 1500 - 1800
MHz. The transistor includes double input and output prematching for full
broadband capability. Gold metalization and diffused ballasting are used to
provide high reliability and supreme ruggedness. The transistor uses a fully
hermetic solder sealed package.
CASE OUTLINE
55AT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVcbo Collector to Base Voltage
BVceo
Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
50 Watts
45 Volts
20 Volts
3.5 Volts
4.0 Amps
- 65 to + 200
o
C
+ 200
o
C
SEE NOTE BELOW
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout - 1dB
Pin
Pg - 1dB
VSWR l
BVcbo
BVceo
BVebo
Icbo
Hfe
胃jc
CHARACTERISTICS
Power Out - 1 dB
Power Input
Power Gain
Load Mismatch Tolerance
Collector to Base Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector to Base Leakage
Current Gain
Thermal Resistance
TEST
CONDITIONS
F = 1700 MHz
Vcc = 18 Volts
Icq = 2.0 Amps
Pout = 10 Watts
Ic = 50 mA
Ic = 50 mA
Ie = 6.0 mA
Vcb = 20 V
Vce = 5 V, Ic = 2 A
Tc = 25
o
C
MIN
10
1.0
10
5:1
45
20
3.5
15
2.6
6.0
100
2.8
TYP
MAX
UNITS
Watts
Watts
dB
Volts
Volts
Volts
mA
o
C/W
Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the mounting
area, refer to 55AW.
Initial Issue September, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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