1617AB5
5 Watts PEP, 26 Volts, Class AB
Linear 1600 - 1700 MHz
GENERAL DESCRIPTION
The 1617AB5 is a COMMON EMITTER transistor capable of providing 5
Watts PEP of Class AB, RF output power over the band 1626- 1660 MHz.
This transistor is specifically designed for
SATCOM BASE STATION
amplifier applications. It includes Input prematching and utilizes Gold
metalization and HIGH VALUE EMITTER ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55CW
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
LVceo
Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
20 Watts
55 Volts
27 Volts
3.5 Volts
2.0 Amps
- 65 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
P-1dB
Pg
IMD
3
VSWR
CHARACTERISTICS
Power Out 1 dB comp pt.
Power Gain
Intermod. distortion -3rd
Load Mismatch Tolerance
TEST CONDITIONS
F =1660 MHz
Icq = 20 mAmpsVcc= 26V
5 W PEP, Two Tone
MIN
5
9.0
TYP
11
MAX
UNITS
Watt
dB
dBc
-32
6:1
BVces
BVceo
BVebo
Ices
h
FE
Cob
胃
jc
Collector to Emitter Breakdown
Collector to EmitterBreakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 15 mA
Ic = 15 mA
Ie = 10 mA
Vce = 26 Volts
55
27
3.5
20
6
6.0
5
100
Volts
Volts
Volts
mA
pF
C/W
Vce = 5 V, Ic =0.1 A
F =1 MHz, Vcb = 28 V
Tc = 25 C
o
o
Issue A, February 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT
THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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