1617AB35
35 Watts, 25 Volts, Class AB
Satcom 1600 - 1700 MHz
GENERAL DESCRIPTION
The 1617AB35 is a COMMON EMITTER transistor capable of providing 35
Watts of Class AB, RF output power over the band 1600 - 1700 MHz. This
transistor is specifically designed for
SATCOM COMMUNICATIONS
amplifier applications. It includes Input prematching and utilizes Gold
metalization and EMITTER BALLASTING to provide high reliability and
supreme ruggedness. .
CASE OUTLINE
55AR, STYLE 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
LVceo
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
120 Watts
60 Volts
27 Volts
3.5 Volts
14.0 Amps
A49
- 65 to + 150
o
C
+ 230
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
3rd Order IMD
TEST CONDITIONS
F =1700 MHz
Vce = 25 Volts
Icq = 250 mAmps
As Above
As Above
As Above
MIN
35
4.5
9.0
10.0
50
3:1
-30
TYP
MAX
UNITS
Watt
Watt
dB
%
dBc
畏
c
VSWR
IMD
3
BVces
LVceo
BVebo
Ices
h
FE
Cob
胃
jc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ic = 50 mA
Ie = 10 mA
Vce = 27 Volts
Vce = 5 V, Ic = 0.7 A
F =1 MHz, Vcb = 28 V
Tc = 25
o
C
60
27
3.5
20
36
1.6
10
100
Volts
Volts
Volts
mA
pF
C/W
o
Issue January 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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