R.1.A.990106-HERIC
1617-35
35 Watts, 28 Volts, Pulsed
Radar 1540 - 1660 MHz
ADVANCED ISSUE
GENERAL DESCRIPTION
The 1617-35 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1540 鈥?1660 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces junction
temperature, extends life.
CASE OUTLINE
55AT
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25擄C
290
Maximum Voltage and Current
50
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
3.0
6
Collector Current (I
c
)
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
W
V
V
A
擄C
擄C
ELECTRICAL CHARACTERISTICS @ 25擄C
擄
SYMBOL
P
out
P
in
P
g
畏
c
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1660 MHz
Vcc = 28 Volts
PW = Note 1
DF = Note 1
F = 1540 MHz
MIN
35
6
7.6
50
10:1
TYP
MAX
UNITS
W
W
dB
%
FUNCTIONAL CHARACTERISTICS @ 25擄C
擄
BV
ebo
BV
ces
h
FE
胃jc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC 鈥?Current Gain
Thermal Resistance
Ie = 20 mA
Ic = 60 mA
Vce = 5V, Ic = 500mA
3.0
50
20
0.6
V
V
擄C/W
NOTE 1: 5
碌s
at 15% Duty
2. At rated pulse conditions
.
Initial Issue May 1999
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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