1417 - 12A
12 Watt - 28 Volts, Class C
Microwave 1400 - 1700 MHz
GENERAL DESCRIPTION
The 1417-12A is a COMMON BASE transistor capable of providing 12
Watts of Class C, RF output power over the band 1400-1700 MHz. This
transistor is designed for Microwave Broadband Class C amplifier
applications. It includes Input prematching and utilizes Gold metalization and
diffused ballasting to provide high reliability and supreme ruggedness. The
transistor uses a fully hermetic high temperature solder sealed package.
CASE OUTLINE
55LV, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
29 Watts
50 Volts
3.5 Volts
2.0 A
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1.4-1.7 GHz
Vcb = 28 Volts
Pin = 2.4 Watts
As Above
F = 1.7 GHz, Pin = 2.4 W
MIN
12.0
2.4
7.0
8.7
40
30:1
TYP
MAX
UNITS
Watt
Watt
dB
%
畏
c
VSWR
1
BVces
BVebo
Icbo
h
FE
Cob
胃
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 80 mA
Ie = 2.0 mA
Vcb = 28 Volts
50
3.5
2.0
20
12
6.0
Volts
Volts
mA
o
Vce = 5 V, Ic = 800 mA
F =1.0 MHz, Vcb = 28 V
pF
C/W
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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