1416 - 200
200 Watts - 50 Volts, Pulsed
Radar 1400 - 1600 MHz
GENERAL DESCRIPTION
The 1416-200 is an internally matched, COMMON BASE transistor capable
of providing 200 Watts of pulsed RF output power at one microsecond pulse
width, ten percent duty factor across the band 1400-1600 MHz. This
hermetically solder-sealed transistor is specifically designed for short pulse
radar applications. It utilizes gold metalization and diffused emitter ballasting
to provide high reliability and supreme ruggedness.
CASE OUTLINE
55AW STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
700 Watts
55 Volts
4.0 Volts
15 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
畏
c
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1400-1600 MHz
Vcc = 50 Volts
Pulse Width =1.0
碌s
Duty = 10%
F=1600MHz, Po=200W
MIN
200
45
6.5
6.8
40
10:1
TYP
MAX
UNITS
Watts
Watts
dB
%
BVces
BVebo
BVcbo
Hfe
胃
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Emitter to Base Breakdown
DC Current Gain
Thermal Resistance
Ic = 10 mA
Ie = 10 mA
Ic = 10 mA
Vce = 5 V, Ic = 1.0 A
Rated Pulse Condition
55
4.0
65
10
0.25
Volts
Volts
Volts
o
C/W
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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